PHYSICAL UNDERSTANDING AND OPTIMUM DESIGN OF HIGH-POWER MILLIMETER-WAVE PULSED IMPATT DIODES

被引：12

作者：

ROLLAND, PA

DALLE, C

FRISCOURT, MR

机构：

[1] Centre Hyperfrequences et Semiconducteurs, Universite des Sciences et Techniques de Lille-Flandres-Artois, 59 655, Villeneuve d'Ascq Cedex

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 05期

关键词：

D O I：

10.1109/55.79563

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The purpose of this paper is a physical understanding of the specific mode of operation of high-power millimeter-wave pulsed IMPATT diodes, derived from a self-consistent numerical model. The theoretical results fit well with recently published experimental findings, and thus allow an optimum design of the 94-GHz IMPATT structure for peak output power in excess of 50 W under low duty cycle.

引用

页码：221 / 223

页数：3

共 8 条

[1] HIGH-POWER OPERATION MODE OF PULSED IMPATT DIODES [J].

BEHR, W ;

LUY, JF .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (05) :206-208

[2] LARGE-SIGNAL OPERATION OF PIN IMPATT DIODES FOR PULSED OSCILLATORS AT MILLIMETRE-WAVE FREQUENCIES [J].

CLAASSEN, M ;

HARTH, W .

ELECTRONICS LETTERS, 1982, 18 (17) :737-739

[3]

Dalle C., 1989, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, V2, P61, DOI 10.1002/jnm.1660020202

[4] FLAT DOPING PROFILE DOUBLE-DRIFT SILICON IMPATT FOR RELIABLE CW HIGH-POWER HIGH-EFFICIENCY GENERATION IN THE 94-GHZ WINDOW [J].

DALLE, C ;

ROLLAND, PA ;

LLETI, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (01) :227-236

[5]

KASPER E, MM90 C P, P293

[6] IMPATT OPERATION BELOW THE AVALANCHE FREQUENCY [J].

LUY, JF .

ELECTRONICS LETTERS, 1990, 26 (23) :1960-1962

[7] NEGATIVE RESISTANCE IN P-N JUNCTIONS UNDER AVALANCHE BREAKDOWN CONDITIONS .I. [J].

MISAWA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :137-+

[8]

ROLLAND PA, 1990, 20TH P EUR MICR C BU

← 1 →