W-BAND MONOLITHIC OSCILLATOR USING INALAS/INGAAS HEMT

被引：12

作者：

KWON, Y

PAVLIDIS, D

TUTT, M

NG, GI

LAI, R

BROCK, T

机构：

[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,CTR SPACE TERAHERTZ TECHNOL,ANN ARBOR,MI 48109

[2] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 18期

关键词：

Microwave devices and components; Oscillators;

D O I：

10.1049/el:19900914

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A W-band monolithic integrated oscillator circuit was designed and fabricated using submicron HEMT technology. The oscillation frequency was around 81 GHz and the power was - 7 dBm at the chip level. This is the first report of an InAIAs/InGaAs monolithic oscillator operating at the Wband. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1425 / 1426

页数：2

共 11 条

[1]

COLQUHOUN A, 1989, OCT IEEE GAAS IC S, P185

[2]

KWON Y, 1990, OCT IEEE GAAS IC S N

[3]

LEBRUN M, 1983, OCT IEEE GAAS IC S P, P20

[4]

MAJIDIAHY R, 1990 IEEE MMIC S, P31

[5] MICROWAVE PERFORMANCE OF A1INAS-GAINAS HEMTS WITH 0.2-MU-M AND 0.1-MU-M GATE LENGTH [J].

MISHRA, UK ;

BROWN, AS ;

ROSENBAUM, SE ;

HOOPER, CE ;

PIERCE, MW ;

DELANEY, MJ ;

VAUGHN, S ;

WHITE, K .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (12) :647-649

[6]

NG GI, 1990, IEEE T EDUC, V36, P2249

[7]

NISHIMOTO C, 1987 IEEE MMIC S, P109

[8] X-BAND VARACTOR TUNED MONOLITHIC GAAS-FET OSCILLATORS [J].

PATAUT, G ;

PAVLIDIS, D .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1988, 64 (05) :731-751

[9]

STERNG HQ, 1985, NOV IEEE GAAS IC S M, P11

[10]

TESSNER AJ, 12TH BIENN IEEE CORN

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