METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS

被引：71

作者：

BACHRACH, RZ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.569762

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1340 / 1343

页数：4

共 31 条

[1] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J].

ARTHUR, JR .

[2] INTERFACE STATES AT GA-GAAS INTERFACE [J].

BACHRACH, RZ ;

BIANCONI, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :525-528

[3] SURFACE RESONANCES AND OXIDATION OF SINGLE-CRYSTAL ALUMINUM [J].

BACHRACH, RZ ;

FLODSTROM, SA ;

BAUER, RS ;

HASTROM, SBM ;

CHADI, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :488-493

[4]

BACHRACH RZ, UNPUBLISHED

[5]

BACHRACH RZ, 1977, 5 P INT C VAC UV RAD, V2, P212

[6]

BACHRACH RZ, 1976, MAT RES SOC S MBE

[7]

BIANCONI A, UNPUBLISHED

[8]

BRILLSON LJ, 1978, J VAC SCI TECHNOL, V15, P1378, DOI 10.1116/1.569792

CHADI, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :631-636

CHADI, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1244-1248