AN EXPERIMENTAL-STUDY ON LASER ANNEALING OF THIN SILICON LAYERS

[1] LASER-INDUCED MELT DYNAMICS OF SI AND SILICA [J]. PHYSICAL REVIEW LETTERS, 1981, 47 (16) : 1151 - 1155

[2] A HEAT-TRANSFER ALGORITHM FOR THE LASER-INDUCED MELTING AND RECRYSTALLIZATION OF THIN SILICON LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2304 - 2309

[3] STABILITY OF PHASE BOUNDARIES ON THIN SILICON LAYERS WITH GLASS SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) : 474 - 480

[4] GRIGOROPOULOS CP, 1987, ASME, V109, P841

[5] ORIGIN OF LAMELLAE IN RADIATIVELY MELTED SILICON FILMS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (04) : 358 - 360

[6] HESS LD, 1983, MATER RES SOC S P, V13, P337

[7] OPTICAL FUNCTIONS OF SILICON BETWEEN 1.7 AND 4.7 EV AT ELEVATED-TEMPERATURES [J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7466 - 7472

[8] MICROSCOPY OF SI FILMS DURING LASER MELTING [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 703 - 706

[9] SEDWICK TO, 1981, MRS P LASER E BEAM S, V1, P147

[10] Shvarev K. M., 1975, Soviet Physics - Solid State, V16, P2111

[1] LASER-INDUCED MELT DYNAMICS OF SI AND SILICA [J]. PHYSICAL REVIEW LETTERS, 1981, 47 (16) : 1151 - 1155

[2] A HEAT-TRANSFER ALGORITHM FOR THE LASER-INDUCED MELTING AND RECRYSTALLIZATION OF THIN SILICON LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2304 - 2309

[3] STABILITY OF PHASE BOUNDARIES ON THIN SILICON LAYERS WITH GLASS SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) : 474 - 480

[4] GRIGOROPOULOS CP, 1987, ASME, V109, P841

[5] ORIGIN OF LAMELLAE IN RADIATIVELY MELTED SILICON FILMS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (04) : 358 - 360

[6] HESS LD, 1983, MATER RES SOC S P, V13, P337

[7] OPTICAL FUNCTIONS OF SILICON BETWEEN 1.7 AND 4.7 EV AT ELEVATED-TEMPERATURES [J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7466 - 7472

[8] MICROSCOPY OF SI FILMS DURING LASER MELTING [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 703 - 706

[9] SEDWICK TO, 1981, MRS P LASER E BEAM S, V1, P147

[10] Shvarev K. M., 1975, Soviet Physics - Solid State, V16, P2111