LOW-TEMPERATURE RF PLASMA TREATMENT OF SI-SIO2 STRUCTURES AS A SUBSTITUTION FOR HIGH-TEMPERATURE ANNEALS

被引：9
作者：
ALEXANDROVA, S
SZEKERES, A
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 96卷 / 01期
关键词：
D O I：
10.1002/pssa.2210960144
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：363 / 366
页数：4
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