ELECTRON-SPIN RESONANCE OF INTERACTING DONOR CLUSTERS IN N-TYPE SI IN TEMPERATURE-RANGE 0.5-4.2 DEGREES K

被引：0

作者：

GINODMAN, VB ^{[1
]}

ZHURKIN, BG ^{[1
]}

LYKOV, AN ^{[1
]}

SHULMAN, LA ^{[1
]}

机构：

[1] PN LEBEDEV PHYS INST,MOSCOW,USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 7卷 / 09期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1135 / 1138

页数：4

共 46 条

[1] ELECTRON-SPIN RESONANCE OF CHLORINE DIOXIDE IN INERT MATRICES AT 4.2 DEGREES K
MCDOWELL, CA
RAGHUNATHAN, P
TAIT, JC
JOURNAL OF CHEMICAL PHYSICS, 1973, 59 (11): : 5858 - 5869
[2] ELECTRON-SPIN RESONANCE STUDY OF INTERACTING DONOR CLUSTERS IN PHOSPHORUS-DOPED SILICON AT LOW-TEMPERATURES .1. SHIFT OF ELECTRON-SPIN RESONANCE LINE AT 0.56-4.2K
TOYODA, Y
KISHIMOTO, N
MURAKAMI, K
MORIGAKI, K
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (01) : 114 - 117
[3] ELECTRON-TRANSPORT IN HEAVILY DOPED AND COMPENSATED N-TYPE INSB IN THE TEMPERATURE-RANGE 4.2-300 K
CHAUDHURI, KD
LUTHRA, A
SAXENA, P
AGARWAL, SK
MATHUR, PC
PHYSICAL REVIEW B, 1980, 22 (12): : 6319 - 6324
[4] ELECTRON-TRANSPORT IN HIGHLY COMPENSATED, UNDEFORMED N-TYPE INSB IN THE TEMPERATURE-RANGE 4.2-300K
KISHAN, H
AGARWAL, SK
CHAUDHURI, KD
PHYSICAL REVIEW B, 1983, 28 (04): : 2078 - 2090
[5] ELECTRON-TRANSPORT IN HEAVILY DOPED AND COMPENSATED N-TYPE GAAS IN THE TEMPERATURE-RANGE 4.2-300-K
SAXENA, TK
BALA, S
AGARWAL, SK
MATHUR, PC
CHAUDHURI, KD
PHYSICAL REVIEW B, 1980, 22 (06): : 2962 - 2967
[6] VARIABLE RANGE HOPPING INDUCED BY ELECTRON-SPIN RESONANCE IN N-TYPE SILICON AND GERMANIUM
KAMIMURA, H
MOTT, NF
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1976, 40 (05) : 1351 - 1358
[7] ELECTRON-TRANSPORT IN HIGHLY COMPENSATED, PLASTICALLY BENT, N-TYPE INSB IN THE TEMPERATURE-RANGE 4.2-300-K
KISHAN, H
AGARWAL, SK
SURI, DK
CHAUDHURI, KD
JOURNAL OF LOW TEMPERATURE PHYSICS, 1986, 63 (3-4) : 169 - 186
[8] ELECTRON-SPIN RESONANCE IN N-TYPE INSB AT SUBMILLIMETER WAVELENGTHS
GERSHENZON, EM
FOGELSON, MS
KHALITOV, VY
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (07): : 752 - 756
[9] ELECTRON-SPIN RESONANCE STUDIES OF INTERACTING DONOR CLUSTERS IN PHOSPHORUS-DOPED SILICON
MORIGAKI, K
MAEKAWA, S
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1972, 32 (02) : 462 - +
[10] ELECTRON-SPIN RESONANCE IN NEUTRON-IRRADIATED N-TYPE GERMANIUM
ERCHAK, DP
OSIKA, VA
STELMAKH, VF
TKACHEV, VD
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (07): : 739 - 741

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