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CHARACTERISTICS OF CHEMICAL ETCHING OF BISMUTH GERMANATE SINGLE-CRYSTALS
被引:0
作者
:
TARASOVA, LS
论文数:
0
引用数:
0
h-index:
0
机构:
NS KURNAKOV GEN & INORGAN CHEM INST,MOSCOW,USSR
NS KURNAKOV GEN & INORGAN CHEM INST,MOSCOW,USSR
TARASOVA, LS
[
1
]
KOSOV, AV
论文数:
0
引用数:
0
h-index:
0
机构:
NS KURNAKOV GEN & INORGAN CHEM INST,MOSCOW,USSR
NS KURNAKOV GEN & INORGAN CHEM INST,MOSCOW,USSR
KOSOV, AV
[
1
]
SKORIKOV, VM
论文数:
0
引用数:
0
h-index:
0
机构:
NS KURNAKOV GEN & INORGAN CHEM INST,MOSCOW,USSR
NS KURNAKOV GEN & INORGAN CHEM INST,MOSCOW,USSR
SKORIKOV, VM
[
1
]
机构
:
[1]
NS KURNAKOV GEN & INORGAN CHEM INST,MOSCOW,USSR
来源
:
INORGANIC MATERIALS
|
1978年
/ 14卷
/ 07期
关键词
:
D O I
:
暂无
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:1024 / 1026
页数:3
相关论文
共 4 条
[1]
DMITRUK LN, 1970, THESIS MOSCOW
[2]
MURASHOV VI, 1974, T MOSK KHIM TEKHNOL, V81, P66
[3]
CHEMICAL ETCHING OF SILICON .2. THE SYSTEM HF, HNO3, H2O, AND HC2H3O2
ROBBINS, H
论文数:
0
引用数:
0
h-index:
0
ROBBINS, H
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
SCHWARTZ, B
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1960,
107
(02)
: 108
-
111
[4]
1965, CHEM HDB, V2
←
1
→
共 4 条
[1]
DMITRUK LN, 1970, THESIS MOSCOW
[2]
MURASHOV VI, 1974, T MOSK KHIM TEKHNOL, V81, P66
[3]
CHEMICAL ETCHING OF SILICON .2. THE SYSTEM HF, HNO3, H2O, AND HC2H3O2
ROBBINS, H
论文数:
0
引用数:
0
h-index:
0
ROBBINS, H
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
SCHWARTZ, B
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1960,
107
(02)
: 108
-
111
[4]
1965, CHEM HDB, V2
←
1
→