CHARACTERISTICS OF CHEMICAL ETCHING OF BISMUTH GERMANATE SINGLE-CRYSTALS

被引:0
作者
TARASOVA, LS [1 ]
KOSOV, AV [1 ]
SKORIKOV, VM [1 ]
机构
[1] NS KURNAKOV GEN & INORGAN CHEM INST,MOSCOW,USSR
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T [工业技术];
学科分类号
08 ;
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页码:1024 / 1026
页数:3
相关论文
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[2]  
MURASHOV VI, 1974, T MOSK KHIM TEKHNOL, V81, P66
[3]   CHEMICAL ETCHING OF SILICON .2. THE SYSTEM HF, HNO3, H2O, AND HC2H3O2 [J].
ROBBINS, H ;
SCHWARTZ, B .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (02) :108-111
[4]  
1965, CHEM HDB, V2