PREPARATION OF CUGASE2 HETEROEPITAXIAL LAYERS BY METALORGANIC MOLECULAR-BEAM EPITAXY

被引：18
作者：
SHIRAKATA, S
MORITA, K
ISOMURA, S
机构：
[1] Ehime University, Matsuyama, Ehime
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 5B期
关键词：
EPITAXIAL LAYER OF CUGASE2; METALORGANIC MOLECULAR BEAM EPITAXY; CHALCOPYRITE SEMICONDUCTORS; PHOTOLUMINESCENCE; PHOTOREFLECTANCE;
D O I：
10.1143/JJAP.33.L739
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The growth of CuGaSe2 films on a GaAs(100) substrate using cyclopentadienylcoppertriethylphosphine (CpCuTEP) as a Cu source in metalorganic molecular beam epitaxy (MOMBE) has been studied. Epitaxial CuGaSe2 films have been grown at 500-degrees-C with the c-axis normal to the substrate plane. Films were characterized by scanning electron microscopy, X-ray diffraction, photoluminescence and photoreflectance techniques.
引用
收藏
页码：L739 / L742
页数：4
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