VALENCE-BAND DEFORMATION POTENTIALS FOR III-V COMPOUNDS

被引:101
作者
WILEY, JD
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D O I
10.1016/0038-1098(70)90336-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:1865 / &
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共 23 条
[1]   ON TEMPERATURE DEPENDENCE OF HOLE MOBILITY IN SILICON [J].
ASCHE, M ;
VONBORZE.J .
PHYSICA STATUS SOLIDI, 1970, 37 (01) :433-&
[2]  
Bir G. L., 1962, FIZ TVERD TELA, V4, P1180
[3]  
BIR GI, 1962, SOV PHYS-SOL STATE, V4, P867
[4]  
BIR GL, 1960, FIZ TVERD TELA, V2, P2287
[5]   VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP [J].
CASEY, HC ;
ERMANIS, F ;
WOLFSTIRN, KB .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) :2945-+
[6]  
CONWELL EM, 1967, HIGH FIELD TRANSPORT, P150
[7]  
CONWELL EM, 1967, HIGH FIELD TRANSPORT, P133
[8]   TEMPERATURE-DEPENDENCE OF COMBINED EFFECTIVE MASS OF HOLES IN SILICON [J].
COSTATO, M ;
REGGIANI, L .
LETTERE AL NUOVO CIMENTO, 1970, 3 (08) :239-&
[9]  
HILSUM C, 1961, SEMICONDUCTING 3 5 C, P118
[10]   LOW-FIELD MOBILITY AND GALVANOMAGNETIC PROPERTIES OF HOLES IN GERMANIUM WITH PHONON SCATTERING [J].
LAWAETZ, P .
PHYSICAL REVIEW, 1968, 174 (03) :867-&