INTERFACE STATE BAND BETWEEN GAAS AND ITS ANODIC NATIVE OXIDE

被引：75

作者：

SAWADA, T

HASEGAWA, H

机构：

[1] Department of Electrical Engineering, Faculty of Engineering, Hokkaido University, Sapporo

来源：

THIN SOLID FILMS | 1979年 / 56卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(79)90063-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The basic interface properties of GaAs metal-oxide-semiconductor (MOS) structures formed using an anodic oxidation process in a mixed solution of glycol and water (the AGW process) were investigated. Detailed measurements of the capacitance-voltage and conductance-voltage characteristics and the transient behaviour of the thermal and optical MOS capacitance revealed various anomalies which are not encountered in the silicon MOS system. On the basis of an analysis of such anomalies an interface state band (ISB) model is presented for the GaAs-anodic oxide MOS system, and the origin and properties of the ISB are discussed. The present ISB does not pin the surface Fermi potential but severely limits the range of its movement at steady state to the lower half of the energy gap. © 1979.

引用

页码：183 / 200

页数：18

共 36 条

[1] FIRST ANODIC-OXIDE GAAS MOSFETS BASED ON EASY TECHNOLOGICAL PROCESSES [J].