GROWTH OF GALNASSB ALLOYS BY MOCVD AND CHARACTERIZATION OF GALNASSB/GASB P-N PHOTODIODES

被引：32
作者：
BOUGNOT, G
DELANNOY, F
FOUCARAN, A
PASCAL, F
ROUMANILLE, F
GROSSE, P
BOUGNOT, J
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 07期
关键词：
D O I：
10.1149/1.2096130
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：1783 / 1788
页数：6
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