共 15 条
[1]
EFFECTS OF SILICON AND SELENIUM DOPING ON GALLIUM ARSENIDE LASER CHARACTERISTICS
[J].
BRITISH JOURNAL OF APPLIED PHYSICS,
1966, 17 (02)
:187-&
[4]
IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .I. MINIMUM COUNTING METHODS
[J].
PHYSICAL REVIEW,
1966, 148 (02)
:722-+
[5]
THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE
[J].
PHYSICAL REVIEW,
1963, 131 (01)
:79-&
[6]
BROADENING OF IMPURITY BANDS IN HEAVILY DOPED SEMICONDUCTORS
[J].
PHYSICAL REVIEW,
1965, 139 (1A)
:A343-&
[9]
SEMICONDUCTOR LASERS
[J].
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS,
1966, 54 (10)
:1276-+
[10]
SPECTRAL INVESTIGATION OF EMISSION INHOMOGENEITIES IN GAAS INJECTION LASERS
[J].
PHYSICA STATUS SOLIDI,
1967, 19 (01)
:K59-&