SPONTANEOUS AND STIMULATED EMISSION IN JUNCTION LASERS .2. BANDS WITH STATE DENSITY TAILS

被引:14
作者
UNGER, K
机构
来源
ZEITSCHRIFT FUR PHYSIK | 1967年 / 207卷 / 04期
关键词
D O I
10.1007/BF01326347
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
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页码:332 / +
页数:1
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共 15 条
[1]   EFFECTS OF SILICON AND SELENIUM DOPING ON GALLIUM ARSENIDE LASER CHARACTERISTICS [J].
DOBSON, CD .
BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (02) :187-&
[2]   LARGE WAVELENGTH CHANGES WITH CAVITY Q IN INJECTION LASERS [J].
DOUSMANIS, GC ;
STAEBLER, DL .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) :2278-+
[3]   TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T ) [J].
DOUSMANIS, GC ;
STAEBLER, DL ;
NELSON, H .
APPLIED PHYSICS LETTERS, 1964, 5 (09) :174-&
[4]   IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .I. MINIMUM COUNTING METHODS [J].
HALPERIN, BI ;
LAX, M .
PHYSICAL REVIEW, 1966, 148 (02) :722-+
[5]   THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J].
KANE, EO .
PHYSICAL REVIEW, 1963, 131 (01) :79-&
[6]   BROADENING OF IMPURITY BANDS IN HEAVILY DOPED SEMICONDUCTORS [J].
MORGAN, TN .
PHYSICAL REVIEW, 1965, 139 (1A) :A343-&
[7]   DEPENDENCE OF THRESHOLD CURRENTS ON IMPURITY CONCENTRATIONS IN LASER DIODES [J].
NANNICHI, Y .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (04) :1499-&
[8]   VARIATION OF GAIN FACTOR OF GAAS LASERS WITH PHOTON AND CURRENT DENSITIES [J].
NANNICHI, Y .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) :3009-&
[9]   SEMICONDUCTOR LASERS [J].
NATHAN, MI .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10) :1276-+
[10]   SPECTRAL INVESTIGATION OF EMISSION INHOMOGENEITIES IN GAAS INJECTION LASERS [J].
RAAB, S ;
BACHERT, H ;
KEIPER, A .
PHYSICA STATUS SOLIDI, 1967, 19 (01) :K59-&