SCHOTTKY-BARRIER HEIGHT DEPENDENCE ON THE COMPENSATION DOPING IN THE INTERFACIAL SI LAYER OF AL/SI/N-GAAS SCHOTTKY DIODES

被引：6

作者：

MILLER, TJ

NATHAN, MI

机构：

[1] Department of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 01期

关键词：

D O I：

10.1063/1.357083

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al/Si/n:GaAs Schottky diode structures have been grown by molecular-beam epitaxy utilizing thin (100 angstrom) Si interfacial layers. These Si layers are unintentionally very heavily n-type doped with As from the system or from the substrate. This n-type doping is intentionally compensated with p-type (Al) doping during the growth of the Si layer in an attempt to modulate the Schottky barrier height. The resultant barrier height, as determined by I-V and C-V measurements, increases with increased acceptor doping in the Si (from 0.34 eV for no Al doping to a maximum of 1.07 eV) as per Poisson's equation.

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页码：371 / 375

页数：5

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