SILICON-CARBIDE JFET RADIATION RESPONSE

被引：71

作者：

MCGARRITY, JM

MCLEAN, FB

DELANCEY, WM

PALMOUR, J

CARTER, C

EDMOND, J

OAKLEY, RE

机构：

[1] CREE RES INC,DURHAM,NC

[2] BOOZ ALLEN & HAMILTON INC,LINTHICUM HTS,MD

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1992年 / 39卷 / 06期

关键词：

D O I：

10.1109/23.211393

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Total dose and neutron-induced displacement damage effect studies are reported for n-channel, 2-mum channel length, depletion mode junction-field-effect-transistors (JFETs) fabricated on 6H-silicon carbide. Very little effect was observed on device characteristics for total dose ionizing radiation for doses up to 100 Mrads(Si), but the devices were significantly degraded after a neutron fluence of 10(16) n/cm2 A value of 4.5 +/- 0.5 carriers/cm3/neutrons/cm2 was obtained for the carrier removal rate from neutron irradiation. The results offer promise for SiC devices to be used in applications which combine high-temperature and radiation environments, where the use of Si and GaAs technologies is limited.

引用

页码：1974 / 1981

页数：8

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