MIXED PARTICLE MONTE-CARLO METHOD FOR DEEP SUBMICRON SEMICONDUCTOR-DEVICE SIMULATOR

被引：3
|
作者：
JIN, GY [1 ]
PARK, YJ [1 ]
MIN, HS [1 ]
机构：
[1] SEOUL NATL UNIV,INTERUNIV SEMICOND RES CTR,SEOUL 151742,SOUTH KOREA
来源：
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1991年 / 10卷 / 12期
关键词：
D O I：
10.1109/43.103503
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper, we introduce a particle simulation method in which two kinds of particle models are used in one device. A conventional Monte Carlo particle model is used in the region where nonstatic effects are evident, and a particle model based on Langevin's equation is used in the region where the drift-diffusion approximation is valid. In this way we can obtain efficiency and the required physical accuracy in device simulation. For the validity of this scheme, a silicon N+-N-N+ structure is simulated and some important results are presented.
引用
收藏
页码：1534 / 1541
页数：8
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