共 50 条
- [1] THE CHANNELING OF SCATTERED RECOILS IN A SILICON SINGLE-CRYSTAL RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1989, 110 (1-2): : 171 - 171
- [2] INFLUENCE OF MECHANICAL DEFORMATION ON ION-CHANNELING YIELDS IN SINGLE-CRYSTAL SILICON BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1972, 17 (03): : 287 - &
- [4] Low energy model for ion implantation of arsenic and boron into (100) single-crystal silicon MICROELECTRONIC DEVICE TECHNOLOGY, 1997, 3212 : 342 - 353
- [5] LATTICE-DISTORTIONS FOR ARSENIC IN SINGLE-CRYSTAL SILICON PHYSICAL REVIEW B, 1986, 34 (02): : 1392 - 1394
- [8] Modeling of ion implantation in single-crystal silicon Nucl Instrum Methods Phys Res Sect B, 1-4 (173):
- [9] BINARY COLLISION SIMULATIONS OF ION TRANSMISSION THROUGH SILICON SINGLE-CRYSTAL FILMS RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1994, 130 : 175 - 186
- [10] TRANSPARENCY OSCILLATIONS OF A SILICON SINGLE-CRYSTAL IN PASSING FROM AXIAL TO PLANAR CHANNELING RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 28 (1-2): : 15 - 21