CHEMICAL BEAM EPITAXY OF STRAIN BALANCED GAP/GAAS/INP/GAAS SUPERLATTICES

被引：5

作者：

BENSAOULA, AH ^{[1
]}

FREUNDLICH, A ^{[1
]}

BENSAOULA, A ^{[1
]}

ROSSIGNOL, V ^{[1
]}

PONCHET, A ^{[1
]}

机构：

[1] CEMES,LOE,CNRS,F-31055 TOULOUSE,FRANCE

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期

关键词：

D O I：

10.1116/1.587058

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work addresses the chemical beam epitaxy (CBE) growth and interface properties of a new type of GaP(n)/GaAs(m)/InP(n)/GaAs(k) pseudomorphically strained superlattice structures. The structural properties of these highly strained heterostructures are discussed in light of high-resolution x-ray diffraction and transmission electron microscopy observations. In spite of the large lattice mismatch between the individual GaP, GaAs, and InP layers in the superlattice structures, it is demonstrated that due to a nearly perfect strain balance between GaP (in extension) and InP (in compression) layers, GaP/GaAs/InP/GaAs superlattices with thicknesses up to 1 mum can be achieved with CBE.

引用

页码：1110 / 1112

页数：3

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[2]

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[7] STRUCTURAL AND OPTICAL CHARACTERIZATION OF ALTERNATELY STRAINED GAAS/GAP/GAAS/INP SUPERLATTICES GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY [J].

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[8]

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