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- [7] EPR INVESTIGATION OF DEFECT FORMATION IN ION-BOMBARDED SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (09): : 1487 - +
- [9] THE CRYSTALLINE-TO-AMORPHOUS TRANSITION IN ION-BOMBARDED SILICON PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (03): : 307 - 325
- [10] ELECTRONIC PROPERTIES OF ION-BOMBARDED EVAPORATED GERMANIUM AND SILICON JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (24): : 4983 - 4996