GAIN MEASUREMENT OF SEMICONDUCTOR-LASER DIODES - REQUIREMENTS FOR THE WAVELENGTH RESOLUTION AND SENSITIVITY TO NOISE

被引:16
作者
JORDAN, V
机构
[1] Technische Universitat Munchen, Munchen
来源
IEE PROCEEDINGS-OPTOELECTRONICS | 1994年 / 141卷 / 01期
关键词
SEMICONDUCTOR LASER DIODES; GAIN MEASUREMENT; NOISE SENSITIVITY;
D O I
10.1049/ip-opt:19949912
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The gain-measurement methods of Hakki-Paoli and Cassidy are investigated theoretically with respect to accuracy of gain evaluation and sensitivity to noise. The Cassidy method proves to be less sensitive to noise than the Hakki-Paoli method if an additional averaging procedure is introduced. The results presented permit easy establishment of the required performance of an appropriate measurement system.
引用
收藏
页码:13 / 15
页数:3
相关论文
共 6 条
[1]   TECHNIQUE FOR MEASUREMENT OF THE GAIN SPECTRA OF SEMICONDUCTOR DIODE-LASERS [J].
CASSIDY, DT .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (11) :3096-3099
[2]   GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].
HAKKI, BW ;
PAOLI, TL .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :1299-1306
[3]   DIAGNOSTICS OF ASYMMETRICALLY COATED SEMICONDUCTOR-LASERS [J].
HAMEL, WA ;
BABELIOWSKY, M ;
WOERDMAN, JP ;
ACKET, GA .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (07) :600-602
[4]  
KESLER MP, 1990, IEEE PHOTONIC TECH L, V7, P464
[5]  
LAM SC, 1990, IEE PROC-J, V137, P64
[6]   MEASUREMENTS OF DG/DN AND DN/DN AND THEIR DEPENDENCE ON PHOTON ENERGY IN LAMBDA = 1.5 MU-M INGAASP LASER-DIODES [J].
WESTBROOK, LD .
IEE PROCEEDINGS-J OPTOELECTRONICS, 1986, 133 (02) :135-142