ION ENHANCED GAS-SURFACE REACTIONS - A KINETIC-MODEL FOR THE ETCHING MECHANISM

被引：93

作者：

GERLACHMEYER, U ^{[1
]}

机构：

[1] MAX PLANCK INST STROMUNGSFORSCH,D-3400 GOTTINGEN,FED REP GER

来源：

SURFACE SCIENCE | 1981年 / 103卷 / 2-3期

关键词：

D O I：

10.1016/0039-6028(81)90282-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：524 / 534

页数：11

共 15 条

[1] ADAMSON AW, 1978, PHYSICAL CHEM SURFAC, P568
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[3] ELECTRON-SPECTROSCOPY STUDY OF SILICON SURFACES EXPOSED TO XEF2 AND THE CHEMISORPTION OF SIF4 ON SILICON
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[5] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING
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[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196
[6] OCCURRENCE OF PHOTOINDUCED REACTIONS DURING X-RAY PHOTOELECTRON SPECTROSCOPIC MEASUREMENTS
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[J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1978, 14 (02) : 159 - 162
[7] ION-ENHANCED GAS-SURFACE CHEMISTRY - THE INFLUENCE OF THE MASS OF THE INCIDENT ION
GERLACHMEYER, U
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[J]. SURFACE SCIENCE, 1981, 103 (01) : 177 - 188
[8] CHEMISORPTION OF CHLORINE ON SI(111) 7X7 AND 1X1 SURFACES
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HAGSTRUM, HD
[J]. PHYSICAL REVIEW B, 1977, 16 (08): : 3648 - 3651
[9] CHLORINE CHEMISORPTION ON SILICON AND GERMANIUM SURFACES - PHOTOEMISSION POLARIZATION EFFECTS WITH SYNCHROTRON RADIATION
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CHRISTMAN, SB
[J]. PHYSICAL REVIEW B, 1977, 16 (04): : 1581 - 1589
[10] CHEMISORPTION OF CL IN SURFACE VACANCIES ON SI(111) 1X1
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CHRISTMAN, SB
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 615 - 617

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