LAMGAL11O19-ND MICROCHIP LASER

被引：5

作者：

MERMILLIOD, N

FRANCOIS, B

WYON, C

机构：

[1] Commissariat a l'Energie Atomique, Department d'Optronique, Centre d'Etudes Nucleaires de Grenoble

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 27期

关键词：

D O I：

10.1063/1.105668

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A LMA (LaMgAl11O19) microchip laser close coupled to the fiber output of a laser diode has been tested. For a 1-mm-thick cavity and a 6 X 10(20) cm-3 Nd concentration, an output power of 35 mW has been obtained, leading to an optical efficiency of 12%. The laser proved to be very stable with an intrinsic noise of 0.6% and an output power variation of only 5% for a 15-degrees-C temperature change of the pump laser diode. Even near threshold two longitudinal modes were observed. The half divergence of this microchip laser was found to be 5 +/- 1 mrad.

引用

页码：3519 / 3520

页数：2

共 8 条

[1]

AGLADZE NI, 1985, ZH PRIKL SPEKTROSC, V43, P805

[2] A DIODE PUMPED SOLID TUNABLE LASER [J].

AUBERT, JJ ;

WYON, C ;

CASSIMI, A ;

HARDY, V ;

HAMEL, J .

OPTICS COMMUNICATIONS, 1989, 69 (3-4) :299-302

[3] PREPARATION, STRUCTURE, OPTICAL, AND MAGNETIC-PROPERTIES OF LANTHANIDE ALUMINATE SINGLE-CRYSTALS (LNMAL11O19) [J].

KAHN, A ;

LEJUS, AM ;

MADSAC, M ;

THERY, J ;

VIVIEN, D ;

BERNIER, JC .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6864-6869

[4]

MERMILLIOD N, IN PRESS IEEE J QUAN

[5]

Shand M L, 1989, OSA P TUNABLE SOLID, V5, P288

[6]

Winzer G., 1976, Siemens Forschungs- und Entwicklungsberichte, V5, P287

[7] CRYSTAL-GROWTH OF LAMGAL11O19-ND [J].

WYON, C ;

AUBERT, JJ ;

GRANGE, Y .

JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) :845-849

[8]

ZAYHOWSKI JJ, 1991, IN PRESS OSA P ADV S

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