VAPOR-PHASE EPITAXIAL-GROWTH OF SN-DOPED GAAS

[1] CAIRNS B, 1968, J ELECTROCHEM SOC, V115, pC327

[2] EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1823 - +

[3] DILORENZO JV, 1970, J ELECTROCHEM SOC, V117, pC102

[4] SUBMICRON EPITAXIAL FILMS FOR GAAS FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (04) : 541 - 544

[5] HOMOGENEOUS SOLUTION GROWN EPITAXIAL GAAS BY TIN DOPING [J]. SOLID-STATE ELECTRONICS, 1969, 12 (05) : 337 - +

[6] MIGITAKA M, 1973, GAAS RELATED COMPOUN, P249

[7] STUDY OF HIGH-SPEED NORMALLY OFF AND NORMALLY ON AI0.5GA0.5AS HETEROJUNCTION GATE GAAS FETS (HJFET) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 619 - 627

[8] SOLOMON R, 1969, 1968 P INT S GAAS DA, P11

[9] GROWTH AND PROPERTIES OF LPE GAAS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (04) : 443 - +

[10] WOLFE CM, 1969, 1968 P INT S GALL AR, P43

[1] CAIRNS B, 1968, J ELECTROCHEM SOC, V115, pC327

[2] EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1823 - +

[3] DILORENZO JV, 1970, J ELECTROCHEM SOC, V117, pC102

[4] SUBMICRON EPITAXIAL FILMS FOR GAAS FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (04) : 541 - 544

[5] HOMOGENEOUS SOLUTION GROWN EPITAXIAL GAAS BY TIN DOPING [J]. SOLID-STATE ELECTRONICS, 1969, 12 (05) : 337 - +

[6] MIGITAKA M, 1973, GAAS RELATED COMPOUN, P249

[7] STUDY OF HIGH-SPEED NORMALLY OFF AND NORMALLY ON AI0.5GA0.5AS HETEROJUNCTION GATE GAAS FETS (HJFET) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 619 - 627

[8] SOLOMON R, 1969, 1968 P INT S GAAS DA, P11

[9] GROWTH AND PROPERTIES OF LPE GAAS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (04) : 443 - +

[10] WOLFE CM, 1969, 1968 P INT S GALL AR, P43