RADIATIVE RECOMBINATION IN TIN-DOPED GERMANIUM

被引：3

作者：

HERGENROTHER, KM

FELDMAN, JM

机构：

[1] Northeastern University, Boston

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 05期

关键词：

D O I：

10.1063/1.1657981

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strong radiative recombination with 0.49 eV energy at 77°K is found in Ge containing Sn. It is proposed that this radiation is due to excitons bound to an isoelectronic Sn center. © 1969 The American Institute of Physics.

引用

页码：2323 / +

页数：1