BEHAVIOR OF INDIUM ON THE SI(111)7X7 SURFACE AT LOW-METAL COVERAGE

被引：81

作者：

NOGAMI, J

PARK, SI

QUATE, CF

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584200

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1479 / 1482

页数：4

共 19 条

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PHYSICAL REVIEW LETTERS, 1987, 58 (04) :369-372

[17] SURFACE MODIFICATIONS INDUCED BY ADSORBATES AT LOW COVERAGE - A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE NI/SI(111) SQUARE-ROOT-19 SURFACE [J].

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PHYSICAL REVIEW LETTERS, 1987, 58 (24) :2575-2578

[18] REGISTRATION AND NUCLEATION OF THE AG/SI(111) (SQUARE-ROOT-3XSQUARE-ROOT-3) R30-DEGREES STRUCTURE BY SCANNING TUNNELING MICROSCOPY [J].

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