BEHAVIOR OF INDIUM ON THE SI(111)7X7 SURFACE AT LOW-METAL COVERAGE

被引：81
作者：
NOGAMI, J
PARK, SI
QUATE, CF
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期
关键词：
D O I：
10.1116/1.584200
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1479 / 1482
页数：4
相关论文
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