ELECTRICAL-PROPERTIES OF OXYGENATED AMORPHOUS-SI PREPARED BY ION-BEAM SPUTTERING

被引：4

作者：

ISHII, K ^{[1
]}

NAOE, M ^{[1
]}

YAMANAKA, S ^{[1
]}

OKANO, S ^{[1
]}

SUZUKI, M ^{[1
]}

机构：

[1] KANAZAWA UNIV,FAC ENGN,KANAZAWA,ISHIKAWA 920,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1979年 / 18卷 / 07期

关键词：

D O I：

10.1143/JJAP.18.1395

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：1395 / 1396

页数：2

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[4]

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[8] DOPING, SCHOTTKY-BARRIER AND P-N-JUNCTION FORMATION IN AMORPHOUS-GERMANIUM AND SILICON BY RF SPUTTERING [J].

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[9] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J].

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[10] TEMPERATURE-DEPENDENCE OF PHOTOCONDUCTIVITY IN A-SI [J].

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