DIFFUSIVITY OF OXYGEN IN SILICON DURING STEAM OXIDATION

被引：150

作者：

MIKKELSEN, JC

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 04期

关键词：

D O I：

10.1063/1.93089

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：336 / 337

页数：2

共 7 条

[1] OXYGEN DIFFUSION IN SILICON AND THE INFLUENCE OF DIFFERENT DOPANTS [J].

GASS, J ;

MULLER, HH ;

STUSSI, H ;

SCHWEITZER, S .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2030-2037

[2] LOW-TEMPERATURE REDISTRIBUTION AND GETTERING OF OXYGEN IN SILICON [J].

MAGEE, TJ ;

LEUNG, C ;

KAWAYOSHI, H ;

FURMAN, B ;

HOPKINS, CG ;

EVANS, CA .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5392-5394

[3] RECOIL OXYGEN IMPLANTS AND THERMAL REDISTRIBUTION OF OXYGEN IN THROUGH-OXIDE ARSENIC-IMPLANTED SI [J].

MAGEE, TJ ;

LEUNG, C ;

KAWAYOSHI, H ;

PALKUTI, LJ ;

FURMAN, BK ;

EVANS, CA ;

CHRISTEL, LA ;

GIBBONS, JF ;

DAY, DS .

APPLIED PHYSICS LETTERS, 1981, 39 (07) :564-566

[4]

MIKKELSEN JC, 1981, APPL PHYS LETT, V37, P712

[5]

PATEL JR, 1981, SEMICONDUCTOR SILICO, P189

[6]

Pauling L., 1960, NATURE CHEM BOND

[7]

TAKANO Y, 1973, SEMICONDUCTOR SILICO, P469

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