MOSFETS ON SILICON PREPARED BY MOVING MELT ZONE RECRYSTALLIZATION OF ENCAPSULATED POLYCRYSTALLINE SILICON ON AN INSULATING SUBSTRATE

被引：74

作者：

MABY, EW ^{[1
]}

GEIS, MW ^{[1
]}

LECOZ, YL ^{[1
]}

SILVERSMITH, DJ ^{[1
]}

MOUNTAIN, RW ^{[1
]}

ANTONIADIS, DA ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

ELECTRON DEVICE LETTERS | 1981年 / 2卷 / 10期

关键词：

D O I：

10.1109/EDL.1981.25418

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：241 / 243

页数：3

共 19 条

[1]

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[3]

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APPLIED PHYSICS LETTERS, 1981, 38 (05) :365-367

[5] SOLID-PHASE GROWTH OF LARGE ALIGNED GRAINS DURING SCANNED LASER CRYSTALLIZATION OF AMORPHOUS-GE FILMS ON FUSED-SILICA [J].

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APPLIED PHYSICS LETTERS, 1980, 36 (02) :158-161

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[7] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J].

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APPLIED PHYSICS LETTERS, 1978, 33 (08) :775-778

[8]

GAT A, COMMUNICATION

[9] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION [J].

GEIS, MW ;

FLANDERS, DC ;

SMITH, HI .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :71-74

[10] SILICON GRAPHOEPITAXY USING A STRIP-HEATER OVEN [J].

GEIS, MW ;

ANTONIADIS, DA ;

SILVERSMITH, DJ ;

MOUNTAIN, RW ;

SMITH, HI .

APPLIED PHYSICS LETTERS, 1980, 37 (05) :454-456

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