共 33 条
[1]
SCHOTTKY BARRIERS ON ORDERED AND DISORDERED SURFACES OF GAAS(110)
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1978, 15 (04)
:1344-1352
[2]
METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1978, 15 (04)
:1340-1343
[3]
BACHRACH RZ, 1979, J VAC SCI TECHNOL, V16, P1195
[4]
SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
[J].
PHYSICAL REVIEW,
1947, 71 (10)
:717-727
[5]
BRILLSON LJ, 1979, J VAC SCI TECHNOL, V16, P1137, DOI 10.1116/1.570177
[6]
SSRL ULTRAHIGH-VACUUM GRAZING INCIDENCE MONOCHROMATOR - DESIGN CONSIDERATIONS AND OPERATING EXPERIENCE
[J].
NUCLEAR INSTRUMENTS & METHODS,
1978, 152 (01)
:73-79
[7]
PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION
[J].
PHYSICAL REVIEW B,
1978, 18 (10)
:5545-5559
[8]
SYNCHROTRON RADIATION AS A NEW TOOL WITHIN PHOTON-BEAM TECHNOLOGY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1975, 12 (06)
:1123-1127
[9]
PHOTOEMISSION STUDIES OF SURFACE-STATES AND OXIDATION OF GROUP-IV SEMICONDUCTORS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1977, 14 (01)
:372-375
[10]
PHOTOEMISSION STUDY OF SURFACE STATES OF (110) GAAS SURFACE
[J].
PHYSICAL REVIEW B,
1976, 13 (02)
:725-738