REACTIVE COEVAPORATION SYNTHESIS AND CHARACTERIZATION OF SRTIO3 THIN-FILMS

被引:46
作者
YAMAGUCHI, H
MATSUBARA, S
MIYASAKA, Y
机构
[1] Fundamental Research Laboratories, NEC Corporation, Miyamae-ku Kawasaki, 216
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 9B期
关键词
REACTIVE COEVAPORATION; CAPACITOR; DIELECTRIC CONSTANT; FERROELECTRIC THIN FILM;
D O I
10.1143/JJAP.30.2197
中图分类号
O59 [应用物理学];
学科分类号
摘要
SrTiO3 thin films were prepared by the reactive coevaporation method, where the Ti and Sr metals were evaporated in oxygen ambient with an E-gun and K-cell, respectively. A uniform depth profile in composition was achieved by altering the Ti evaporation rate according to the Sr evaporation rate change. A typical dielectric constant of 170 was measured on films of 75 nm in thickness. The in-situ annealing in oxygen plasma reduced the leakage current.
引用
收藏
页码:2197 / 2199
页数:3
相关论文
共 4 条
[1]   N-TYPE SRTIO3 THIN-FILMS - ELECTRONIC PROCESSES AND PHOTOELECTROCHEMICAL BEHAVIOR [J].
CAMPET, G ;
CARRERE, M ;
PUPRICHITKUN, C ;
WEN, SZ ;
SALARDENNE, J ;
CLAVERIE, J .
JOURNAL OF SOLID STATE CHEMISTRY, 1987, 69 (02) :267-273
[2]  
MATSUBARA S, 1990, MATER RES SOC SYMP P, V200, P243, DOI 10.1557/PROC-200-243
[3]  
PENNEBAKER WB, 1969, IBM J RES DEV NOV, P686
[4]   BARRIER LAYERS FOR REALIZATION OF HIGH CAPACITANCE DENSITY IN SRTIO3 THIN-FILM CAPACITOR ON SILICON [J].
SAKUMA, T ;
YAMAMICHI, S ;
MATSUBARA, S ;
YAMAGUCHI, H ;
MIYASAKA, Y .
APPLIED PHYSICS LETTERS, 1990, 57 (23) :2431-2433