GROWTH PARAMETER DEPENDENCE OF BACKGROUND DOPING LEVEL IN GAAS, IN0.53GA0.47AS AND ALXGA1-XAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY

被引：34
作者：
BENCHIMOL, JL
ALEXANDRE, F
GAO, Y
ALAOUI, F
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(89)90370-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
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页码：150 / 153
页数：4
相关论文
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