KINETICS AND MECHANISMS OF CW-LASER INDUCED DEPOSITION OF METALS FOR MICROELECTRONICS

被引:9
作者
AUVERT, G
机构
关键词
D O I
10.1016/0169-4332(89)90189-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:47 / 53
页数:7
相关论文
共 28 条
[1]   LASER CHEMICAL VAPOR-DEPOSITION OF SELECTED AREA FE AND W FILMS [J].
ALLEN, SD ;
TRINGUBO, AB .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1641-1643
[2]   LASER CHEMICAL VAPOR-DEPOSITION - A TECHNIQUE FOR SELECTIVE AREA DEPOSITION [J].
ALLEN, SD .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6501-6505
[3]  
AUVERT G, 1988, NATO ASI SERIES E, V139, P201
[4]  
AUVERT G, 1986, EUR MATER RES SOC S, V11, P109
[5]  
BAUERLE D, 1983, SPRINGER SERIES CHEM, V33, P178
[6]  
Braichotte D., 1984, SPRINGER SER CHEM PH, V39, P183
[7]  
BRAICHOTTE D, 1985, INT C LASERS, P688
[8]  
BRAICHOTTE D, 1985, MATE RRES SOC S P, V58, P879
[9]   LASER DIRECT WRITING OF ALUMINUM CONDUCTORS [J].
CACOURIS, T ;
SCELSI, G ;
SHAW, P ;
SCARMOZZINO, R ;
OSGOOD, RM ;
KRCHNAVEK, RR .
APPLIED PHYSICS LETTERS, 1988, 52 (22) :1865-1867
[10]   CHEMICAL VAPOR-DEPOSITION OF SILICON USING A CO2-LASER [J].
CHRISTENSEN, CP ;
LAKIN, KM .
APPLIED PHYSICS LETTERS, 1978, 32 (04) :254-256