PHOTOELECTRONIC PROPERTIES OF ION-IMPLANTED CDS

被引：27

作者：

HOU, SL

MARLEY, JA

机构：

来源：

APPLIED PHYSICS LETTERS | 1970年 / 16卷 / 11期

关键词：

D O I：

10.1063/1.1653069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：467 / &

共 15 条

[1] PHOSPHOROUS-ION-IMPLANTED CDS [J].

ANDERSON, WW ;

MITCHELL, JT .

APPLIED PHYSICS LETTERS, 1968, 12 (10) :334-&

[2]

AVEN M, 1967, 2 6 SEMICONDUCTING C, P1250

[3]

BJORKQVIST K, 1968, APPL PHYS LETT, V13, P379, DOI 10.1063/1.1652479

[4]

BUBE RH, 1959, RCA REV, V20, P564

[5] HIGH CONDUCTIVITY P-TYPE CDS [J].

CHERNOW, F ;

ELDRIDGE, G ;

RUSE, G ;

WAHLIN, L .

APPLIED PHYSICS LETTERS, 1968, 12 (10) :339-&

[6] TYPE CONVERSION AND P-N JUNCTION FORMATION IN ION-IMPLANTED ZNTE [J].

HOU, SL ;

BECK, K ;

MARLEY, JA .

APPLIED PHYSICS LETTERS, 1969, 14 (05) :151-&

[7] ELECTRICAL PROPERTIES OF ZINC AND CADMIUM ION IMPLANTED LAYERS IN GALLIUM ARSENIDE [J].

HUNSPERG.RG ;

MARSH, OJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) :488-&

[8] PRESENCE OF DEEP LEVELS IN ION IMPLANTED JUNCTIONS [J].

HUNSPERGER, RG ;

MARSH, OJ ;

MEAD, CA .

APPLIED PHYSICS LETTERS, 1968, 13 (09) :295-+

[9]

Lindhard J., 1963, KGL DANSKE VIDENSKAB, V33

[10] ELECTRICAL BEHAVIOR OF IMPLANTED BISMUTH IN SILICON [J].

MARSH, OJ ;

BARON, R ;

SHIFRIN, GA ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1968, 13 (06) :199-&

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