ROLE OF ELECTRICAL RELIEF OF SURFACES OF CRYSTALLINE SUBSTRATES IN NUCLEATION AND GROWTH OF THIN FILMS

被引：19
作者：
DISTLER, GI
VLASOV, VP
机构：
[1] Institute of Crystallography, Academy of Sciences, the U.S.S.R., Moscow
来源：
THIN SOLID FILMS | 1969年 / 3卷 / 05期
关键词：
D O I：
10.1016/0040-6090(69)90137-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A new method of electrical decoration of single crystal surfaces based on selective crystallization of silver chloride by thermal evaporation is described. At the early stages of deposition, AgCl crystallizes as a continous monocrystalline film on such elements of the surface which have the largest negative potential, while on the other elements it crystallizes as discrete crystals positioned randomly. It is shown that in many cases just the electrical, and not the geometrical, relief of crystal substrate surfaces accounts for the selectivity of nucleation and growth. © 1969.
引用
收藏
页码：333 / &
相关论文
共 21 条
[1]  
ADAMSKY RF, 1966, USE THIN FILMS PHYSI, P243
[2]  
ANDERSON JC, 1966, USE THIN FILMS PH ED, P243
[3]   A NEW TECHNIQUE FOR DECORATION OF CLEAVAGE AND SLIP STEPS ON IONIC CRYSTAL SURFACES [J].
BASSETT, GA .
PHILOSOPHICAL MAGAZINE, 1958, 3 (33) :1042-&
[4]  
Distler G. I., 1968, Journal of Crystal Growth, V3-4Spe, P175, DOI 10.1016/0022-0248(68)90123-1
[5]  
Distler G. I., 1969, Kristallografiya, V14, P90
[6]  
Distler G. I., 1969, Fizika Tverdogo Tela, V11, P547
[7]   INTERACTION OF DEFECT AND DOMAIN STRUCTURES OF TRIGLYCINE SULPHATE CRYSTALS IN FERROELECTRIC AND PARAELECTRIC STATES [J].
DISTLER, GI ;
KONSTANT.VP ;
GERASIMO.YM ;
TOLMACHE.GA .
NATURE, 1968, 218 (5143) :762-&
[8]   POLARIZATION STRUCTURE OF INTERFACIAL AMORPHOUS FILMS [J].
DISTLER, GI ;
SHENYAVSKAYA, LA .
NATURE, 1969, 221 (5175) :52-+
[9]  
DISTLER GI, TO BE PUBLISHED
[10]  
DISTLER GI, 1965, FTT, V8, P600
123