SUB-BAND STRUCTURES OF N-CHANNEL INVERSION LAYERS ON III-V COMPOUNDS - POSSIBILITY OF GATE CONTROLLED GUNN-EFFECT

被引:43
|
作者
TAKADA, Y [1 ]
UEMURA, Y [1 ]
机构
[1] UNIV TOKYO,FAC SCI,DEPT PHYS,TOKYO 113,JAPAN
关键词
D O I
10.1143/JPSJ.43.139
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:139 / 150
页数:12
相关论文
共 11 条
  • [1] RESEARCH ON GUNN-EFFECT MATERIALS (III-V COMPOUNDS)
    LESSOFF, H
    SWIGGARD, E
    REPORT OF NRL PROGRESS, 1976, (SEP): : 4 - 4
  • [2] Impact of Gate Oxide Complex Band Structure on n-Channel III-V FinFETs
    Crum, Dax M.
    Valsaraj, Amithraj
    Register, Leonard F.
    Banerjee, Sanjay K.
    Sahu, Bhagawan
    Krivakopic, Zoran
    Banna, Srinivasa
    Nayak, Deepak
    2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD), 2015, : 250 - 253
  • [3] ON THE GATE-CONTROLLED SURFACE CAPACITANCE OF MOS STRUCTURES OF SI HAVING N-CHANNEL INVERSION-LAYERS
    CHOUDHURY, DR
    CHOWDHURY, AK
    CHAKRAVARTI, AN
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1980, 30 (10) : 1157 - 1160
  • [4] On the gate capacitance of Mos structures in N-channel inversion layers on ternary chalcopyrite semiconductors
    Ghatak, K.P.
    Chattopadhyay, N.
    Mondal, M.
    Applied Physics A: Solids and Surfaces, 1989, 48 (04): : 365 - 371
  • [5] ON THE GATE CAPACITANCE OF MOS STRUCTURES IN N-CHANNEL INVERSION-LAYERS ON TERNARY CHALCOPYRITE SEMICONDUCTORS
    GHATAK, KP
    CHATTOPADHYAY, N
    MONDAL, M
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 48 (04): : 365 - 371
  • [6] ON THE GATE CAPACITANCE OF METAL-OXIDE SEMICONDUCTOR STRUCTURES IN N-CHANNEL INVERSION-LAYERS ON TERNARY CHALCOPYRITE SEMICONDUCTORS
    GHATAK, KP
    BISWAS, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (01): : 104 - 110
  • [7] C-V Characteristics of n-channel Double Gate MOS Structures Incorporating the Effect of Interface States
    Alam, A.
    Ahmed, S.
    Alam, M. K.
    Khosru, Quazi D. M.
    PROCEEDINGS OF ICECE 2008, VOLS 1 AND 2, 2008, : 456 - 459
  • [8] III-V Multiple-Gate Field-Effect Transistors With High-Mobility In0.7Ga0.3As Channel and Epi-Controlled Retrograde-Doped Fin
    Chin, Hock-Chun
    Gong, Xiao
    Wang, Lanxiang
    Lee, Hock Koon
    Shi, Luping
    Yeo, Yee-Chia
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (02) : 146 - 148
  • [9] Quantization Effect in N-Channel Inversion Mode Si, In0.53Ga0.47As and Ge Based Double Gate MOSFET Using Quasi-Static Capacitance-Voltage Characteristics for Upcoming Sub 10 nm Technology Node
    Sanjay
    Kumar, Vibhor
    Vohra, Anil
    SILICON, 2024, 16 (08) : 3325 - 3340
  • [10] III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
    Yokoyama, Masafumi
    Kim, Sanghyeon
    Zhang, Rui
    Taoka, Noriyuki
    Urabe, Yuji
    Maeda, Tatsuro
    Takagi, Hideki
    Yasuda, Tetsuji
    Yamada, Hisashi
    Ichikawa, Osamu
    Fukuhara, Noboru
    Hata, Masahiko
    Sugiyama, Masakazu
    Nakano, Yoshiaki
    Takenaka, Mitsuru
    Takagi, Shinichi
    APPLIED PHYSICS EXPRESS, 2012, 5 (07)