CHARACTERIZATION OF REACTIVELY SPUTTERED WNX FILM AS A GATE METAL FOR SELF-ALIGNMENT GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：52

作者：

UCHITOMI, N ^{[1
]}

NAGAOKA, M ^{[1
]}

SHIMADA, K ^{[1
]}

MIZOGUCHI, T ^{[1
]}

TOYODA, N ^{[1
]}

机构：

[1] TOSHIBA CORP,TAMAGAWA WORKS,CTR MICROELECTR,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 06期

关键词：

D O I：

10.1116/1.583463

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1392 / 1397

页数：6

共 5 条

ADACHI, S .

[2] SPUTTERED W-N DIFFUSION-BARRIERS [J].

KATTELUS, HP ;

KOLAWA, E ;

AFFOLTER, K ;

NICOLET, MA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06) :2246-2254

[3]

UCHITOMI N, 1984, 16TH C SOL STAT DEV, P383

YAMAGISHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (12) :L895-L898

[5]

YOKOYAMA N, 1981, IEEE INT SOLID STATE