LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES

被引:2545
作者
MORKOC, H [1 ]
STRITE, S [1 ]
GAO, GB [1 ]
LIN, ME [1 ]
SVERDLOV, B [1 ]
BURNS, M [1 ]
机构
[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA
关键词
D O I
10.1063/1.358463
中图分类号
O59 [应用物理学];
学科分类号
摘要
In the past several years, research in each of the wide-band-gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device applications. The merits of each contender for high-temperature electronics and short-wavelength optical applications are compared. The outstanding thermal and chemical stability of SiC and GaN should enable them to operate at high temperatures and in hostile environments, and also make them attractive for high-power operation. The present advanced stage of development of SiC substrates and metal-oxide-semiconductor technology makes SiC the leading contender for high-temperature and high-power applications if ohmic contacts and interface-state densities can be further improved. GaN, despite fundamentally superior electronic properties and better ohmic contact resistances, must overcome the lack of an ideal substrate material and a relatively advanced SiC infrastructure in order to compete in electronics applications. Prototype transistors have been fabricated from both SiC and GaN, and the microwave characteristics and high-temperature performance of SiC transistors have been studied. For optical emitters and detectors, ZnSe, SiC, and GaN all have demonstrated operation in the green, blue, or ultraviolet (UV) spectra. Blue SiC light-emitting diodes (LEDs) have been on the market for several years, joined recently by UV and blue GaN-based LEDs. These products should find wide use in full color display and other technologies. Promising prototype UV photodetectors have been fabricated from both SiC and GaN. In laser development, ZnSe leads the way with more sophisticated designs having further improved performance being rapidly demonstrated. If the low damage threshold of ZnSe continues to limit practical laser applications, GaN appears poised to become the semiconductor of choice for short-wavelength lasers in optical memory and other applications. For further development of these materials to be realized, doping densities (especially p type) and ohmic contact technologies have to be improved. Economies of scale need to be realized through the development of larger SiC substrates. Improved substrate materials, ideally GaN itself, need to be aggressively pursued to further develop the GaN-based material system and enable the fabrication of lasers. ZnSe material quality is already outstanding and now researchers must focus their attention on addressing the short lifetimes of ZnSe-based lasers to determine whether the material is sufficiently durable for practical laser applications. The problems related to these three wide-band-gap semiconductor systems have moved away from materials science toward the device arena, where their technological development can rapidly be brought to maturity.
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页码:1363 / 1398
页数:36
相关论文
共 211 条
[1]   REACTIVE ION ETCHING OF GALLIUM NITRIDE IN SILICON TETRACHLORIDE PLASMAS [J].
ADESIDA, I ;
MAHAJAN, A ;
ANDIDEH, E ;
KHAN, MA ;
OLSEN, DT ;
KUZNIA, JN .
APPLIED PHYSICS LETTERS, 1993, 63 (20) :2777-2779
[2]  
AKASAKI I, 1991, J LUMIN, V48-9, P666
[3]   EFFECTS OF AIN BUFFER LAYER ON CRYSTALLOGRAPHIC STRUCTURE AND ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAN AND GA1-XALXN(0-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.4) FILMS GROWN ON SAPPHIRE SUBSTRATE BY MOVPE [J].
AKASAKI, I ;
AMANO, H ;
KOIDE, Y ;
HIRAMATSU, K ;
SAWAKI, N .
JOURNAL OF CRYSTAL GROWTH, 1989, 98 (1-2) :209-219
[4]  
AKASAKI I, COMMUNICATION
[5]  
AKASAKI I, 1991, NOV MAT RES SOC FALL
[6]   ELECTROLUMINESCENCE IN AN OXYGEN-DOPED ZNSE P-N-JUNCTION GROWN BY MOLECULAR-BEAM EPITAXY [J].
AKIMOTO, K ;
MIYAJIMA, T ;
MORI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (04) :L531-L534
[7]   ROOM-TEMPERATURE LOW-THRESHOLD SURFACE-STIMULATED EMISSION BY OPTICAL-PUMPING FROM AL0.1GA0.9N/GAN DOUBLE-HETEROSTRUCTURE [J].
AMANO, H ;
WATANABE, N ;
KOIDE, N ;
AKASAKI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (7B) :L1000-L1002
[8]   HETEROEPITAXIAL GROWTH AND THE EFFECT OF STRAIN ON THE LUMINESCENT PROPERTIES OF GAN FILMS ON (1120) AND (0001) SAPPHIRE SUBSTRATES [J].
AMANO, H ;
HIRAMATSU, K ;
AKASAKI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08) :L1384-L1386
[9]   P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].
AMANO, H ;
KITO, M ;
HIRAMATSU, K ;
AKASAKI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114
[10]   METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].
AMANO, H ;
SAWAKI, N ;
AKASAKI, I ;
TOYODA, Y .
APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355