A NEW DEVICE USING THE TUNNELING PROCESS IN NARROW P-N JUNCTIONS

被引：125
作者：
ESAKI, L
MIYAHARA, Y
机构：
来源：
SOLID-STATE ELECTRONICS | 1960年 / 1卷 / 01期
关键词：
D O I：
10.1016/0038-1101(60)90052-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：13 / &
相关论文
共 8 条
[1]   CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J].
DRESSELHAUS, G ;
KIP, AF ;
KITTEL, C .
PHYSICAL REVIEW, 1955, 98 (02) :368-384
[2]  
EBERS JJ, UNPUB P I ELECT B S, V15
[3]   NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J].
ESAKI, L .
PHYSICAL REVIEW, 1958, 109 (02) :603-604
[4]  
ESAKI L, 1958, IRE WESCON CONVENT 3, P176
[5]  
ESAKI L, 1959, 1958 INT C SOL STAT
[6]  
MCAFEE, 1951, PHYS REV, V83, P650
[7]   EXCESS NOISE IN NARROW GERMANIUM P-N JUNCTIONS [J].
YAJIMA, T ;
ESAKI, L .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1958, 13 (11) :1281-1287
[8]  
Zener C., 1934, P ROY SOC A, V145, P523, DOI DOI 10.1098/RSPA.1934.0116
1