GROWTH-MECHANISM OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY

被引：16
|
作者：
HSU, CC
XU, JB
WILSON, IH
机构：
[1] Department of Electronic Engineering, Chinese University of Hong Kong, Shatin, NT
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 16期
关键词：
D O I：
10.1063/1.111697
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We observed concentric ring patterns on metalorganic vapor phase epitaxy grown GaAs surface by atomic force microscopy. The growth mechanism for the concentric ring pattern is different from that of spiral growth due to screw dislocations. A more plausible growth mechanism for the concentric rings is the stacking fault mechanism. Stacking faults that emerge from the (100) growth surface create steps of 1/3 and 2/3 the elementary height. The 1/3 and 2/3 substeps act as persistent step sources for growth.
引用
收藏
页码：2105 / 2107
页数：3
相关论文
共 50 条
  • [1] SPIRAL GROWTH OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
    HSU, CC
    LU, YC
    XU, JB
    WILSON, IH
    APPLIED PHYSICS LETTERS, 1994, 64 (15) : 1959 - 1961
  • [2] A GROWTH ANALYSIS FOR METALORGANIC VAPOR-PHASE EPITAXY OF GAAS
    DOI, A
    IWAI, S
    MEGURO, T
    NAMBA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (05): : 795 - 800
  • [3] SPIRAL GROWTH OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
    HSU, CC
    LU, YC
    XU, JB
    WONG, TKS
    WILSON, IH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (03): : 2115 - 2117
  • [4] HETEROEPITAXIAL GROWTH OF INP ON GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
    PAK, K
    WAKAHARA, A
    SATO, T
    TAKAGI, Y
    YOSHIDA, A
    YONEZU, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) : C576 - C576
  • [5] GROWTH AS GAAS BY SWITCHED LASER METALORGANIC VAPOR-PHASE EPITAXY
    DOI, A
    AOYAGI, Y
    NAMBA, S
    APPLIED PHYSICS LETTERS, 1986, 48 (26) : 1787 - 1789
  • [6] A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY
    LEYS, MR
    VEENVLIET, H
    JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 145 - 153
  • [7] SELECTIVE EPITAXY IN THE CONVENTIONAL METALORGANIC VAPOR-PHASE EPITAXY OF GAAS
    KUECH, TF
    TISCHLER, MA
    POTEMSKI, R
    APPLIED PHYSICS LETTERS, 1989, 54 (10) : 910 - 912
  • [8] Metalorganic Vapor-Phase Epitaxy of ZnTe and CdZnTe on GaAs
    G. G. Devyatykh
    A. N. Moiseev
    A. P. Kotkov
    V. V. Dorofeev
    N. D. Grishnova
    V. S. Krasil'nikov
    A. I. Suchkov
    Inorganic Materials, 2002, 38 : 99 - 105
  • [9] METALORGANIC VAPOR-PHASE EPITAXY OF GAAS ON SI(100)
    FREUNDLICH, A
    GRENET, JC
    NEU, G
    LEYCURAS, A
    GIBART, P
    VERIE, C
    VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1988, 43 (241): : 195 - 196
  • [10] Metalorganic vapor-phase epitaxy of ZnTe and CdZnTe on GaAs
    Devyatykh, GG
    Moiseev, AN
    Kotkov, AP
    Dorofeev, VV
    Grishnova, ND
    Krasil'nikov, VS
    Suchkov, AI
    INORGANIC MATERIALS, 2002, 38 (02) : 99 - 105
12345