EFFECTIVE LIFETIME IN N-TYPE GERMANIUM IRRADIATED WITH 660-MEV PROTONS

被引:0
作者
POKOTILO, YM [1 ]
TKACHEV, VD [1 ]
YAVID, VY [1 ]
机构
[1] BELORUSSIAN POLYTECH INST,MINSK,BESSR
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1980年 / 14卷 / 11期
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D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:1317 / 1319
页数:3
相关论文
共 11 条
[1]  
CURTIS OL, 1968, LATTICE DEFECTS SEMI, P333
[2]  
KONOPLEVA RF, 1975, SOV PHYS SEMICOND+, V9, P275
[3]  
KONOPLEVA RF, 1975, INTERACTION CHARGED
[4]  
MURIN LI, 1978, DOKL AKAD NAUK BELAR, V22, P697
[5]  
POKOTILO YM, 1979, SOV PHYS SEMICOND+, V13, P1032
[6]  
SADIKOV VP, 1973, THESIS KIEV
[7]  
TKACHEV VD, 1976, SOV PHYS SEMICOND+, V10, P998
[8]  
UKHIN NA, 1972, SOV PHYS SEMICOND+, V6, P804
[9]  
UKHIN NA, 1969, IAE1884 I AT EN PREP
[10]  
VINETSKII VL, 1979, RAD PHYSICS SEMICOND