HIGH ELECTRON-MOBILITY IN ALGAAS/GAAS MODULATION-DOPED STRUCTURES

被引：56
作者：
SAKU, T
HIRAYAMA, Y
HORIKOSHI, Y
机构：
[1] NTT Basic Research Laboratories, Musashino-shi, Tokyo
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1991年 / 30卷 / 05期
关键词：
MBE; MODULATION-DOPED STRUCTURE; ELECTRON MOBILITY; BALLISTIC TRANSPORT;
D O I：
10.1143/JJAP.30.902
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
AlGaAs/GaAs modulation-doped structures with low-temperature electron mobility exceeding 10(7) cm2/Vs at a carrier concentration of 2.5 approximately 3 x 10(11) cm-2 are grown by molecular beam epitaxy. Electron mobility above 8 x 10(6) cm2/Vs is reproducibly obtained over more than 6 months by careful baking of the growth system and optimization of the layer structure. Voltage-current measurements showing nonlinear and negative resistance characteristics at low temperatures indicate that the ballistic motion of electrons dominates the transport characteristics of these samples.
引用
收藏
页码：902 / 905
页数：4
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