ELECTRONIC-STRUCTURE O MODEL SI-SIO2 INTERFACES

被引：0
作者：
HERMAN, F
HENDERSON, DJ
KASOWSKI, RV
机构：
[1] IBM CORP,RES LAB,SAN JOSE,CA 95114
[2] DUPONT CO,DEPT CENT RES & DEV,WILMINGTON,DE 19898
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1980年 / 25卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：304 / 304
页数：1
相关论文
共 50 条
[41]   Electronic transport in Si-SiO2 nanocomposite films [J].
Ciurea, M. L. ;
Teodorescu, V. S. ;
Iancu, V. ;
Balberg, I. .
CHEMICAL PHYSICS LETTERS, 2006, 423 (1-3) :225-228
[42]   CHARACTERISTIC ELECTRONIC DEFECTS AT THE SI-SIO2 INTERFACE [J].
JOHNSON, NM ;
BIEGELSEN, DK ;
MOYER, MD ;
CHANG, ST ;
POINDEXTER, EH ;
CAPLAN, PJ .
APPLIED PHYSICS LETTERS, 1983, 43 (06) :563-565
[43]   Atomic-scale structure of the Si-SiO2 and SiC-SiO2 interfaces and the origin of their contrasting properties [J].
Buczko, R ;
Pennycook, SJ ;
Pantelides, ST .
STRUCTURE AND ELECTRONIC PROPERTIES OF ULTRATHIN DIELECTRIC FILMS ON SILICON AND RELATED STRUCTURES, 2000, 592 :227-232
[44]   AN INVESTIGATION OF SI-SIO2 AND SITA2O5 INTERFACES PREPARED BY REACTIVE SPUTTERING [J].
AKIYAMA, K ;
ISHIHARA, T ;
TAKEMOTO, T ;
TERUI, Y .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) :672-&
[45]   Electronic structure at realistic Si(100)-SiO2 interfaces [J].
Giustino, F ;
Bongiorno, A ;
Pasquarello, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (11B) :7895-7898
[46]   THE ATOMIC-STRUCTURE OF SI-SIO2 INTERFACES SUGGESTING A LEDGE MECHANISM OF SILICON OXIDATION [J].
MAZUR, JH ;
WASHBURN, J .
AIP CONFERENCE PROCEEDINGS, 1984, (122) :52-55
[47]   ELECTRONIC-STRUCTURE OF INTERFACES [J].
FLORES, F ;
DURAN, JC ;
MUNOZ, A .
PHYSICA SCRIPTA, 1987, T19A :102-108
[48]   Microscopic bonding and macroscopic strain relaxations at Si-SiO2 interfaces [J].
Lucovsky, G ;
Phillips, JC .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 78 (04) :453-459
[49]   Nitrogen at Si-SiO2 interfaces: Chemical bonding and electrical performance [J].
Lucovsky, G ;
Niimi, H ;
Koh, K ;
Lee, DR ;
Jing, Z .
PHYSICS AND CHEMISTRY OF SIO(2) AND THE SI-SIO(2) INTERFACE-3, 1996, 1996, 96 (01) :441-455
[50]   Microscopic bonding and macroscopic strain relaxations at Si-SiO2 interfaces [J].
G. Lucovsky ;
J.C. Phillips .
Applied Physics A, 2004, 78 :453-459
12345