ELECTRONIC-STRUCTURE O MODEL SI-SIO2 INTERFACES

被引:0
作者
HERMAN, F
HENDERSON, DJ
KASOWSKI, RV
机构
[1] IBM CORP,RES LAB,SAN JOSE,CA 95114
[2] DUPONT CO,DEPT CENT RES & DEV,WILMINGTON,DE 19898
来源
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1980年 / 25卷 / 03期
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:304 / 304
页数:1
相关论文
共 50 条
[31]   ELECTRONIC-STRUCTURE OF V-SI INTERFACES [J].
REES, NV ;
MATTHAI, CC .
VACUUM, 1988, 38 (4-5) :430-430
[32]   ELECTRONIC-STRUCTURE OF K/SI(111) INTERFACES [J].
WEITERING, HH ;
CHEN, J ;
DINARDO, NJ ;
PLUMMER, EW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04) :2049-2053
[33]   EFFECTS OF SILICON-NITRIDE FILMS ON THE ELECTRONIC-PROPERTIES OF SI-SIO2 INTERFACES [J].
KAMADA, M ;
YAGI, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (12) :1684-1688
[34]   HYDROGEN-BONDING ARRANGEMENTS AT SI-SIO2 INTERFACES [J].
JING, Z ;
LUCOVSKY, G ;
WHITTEN, JL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04) :1613-1617
[35]   Structure and energetics of the Si-SiO2 interface [J].
Tu, Y ;
Tersoff, J .
PHYSICAL REVIEW LETTERS, 2000, 84 (19) :4393-4396
[36]   CHEMICAL-BOND AND RELATED PROPERTIES OF SIO2 .7. STRUCTURE AND ELECTRONIC PROPERTIES OF THE SIOX REGION OF SI-SIO2 INTERFACES [J].
HUBNER, K .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 61 (02) :665-673
[37]   STRUCTURE AND PROPERTIES OF THE SI-SIO2 INTERREGION [J].
HUBNER, K .
LECTURE NOTES IN PHYSICS, 1983, 175 :221-229
[38]   Passivation and Depassivation of Si-SiO2 Interfaces with Atomic Hydrogen [J].
Zhang, C. ;
Weber, K. J. ;
Jin, H. .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (11) :H836-H840
[39]   Reaction pathways for nitrogen incorporation at Si-SiO2 interfaces [J].
Koh, K ;
Niimi, H ;
Lucovsky, G .
AMORPHOUS AND CRYSTALLINE INSULATING THIN FILMS - 1996, 1997, 446 :267-272
[40]   ELECTRICALLY ACTIVE PARAMAGNETIC CENTERS AT SI-SIO2 INTERFACES [J].
MENDZ, G ;
HANEMAN, D .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1981, 26 (02) :87-92