EPITAXIAL GROWTH OF GERMANIUM IN OPEN IODIDE PROCESS

被引：0

作者：

KOLESNIK.VN

DEMYANOV, EA

DEREZA, LI

机构：

来源：

SOVIET PHYSICS CRYSTALLOGRAPHY, USSR | 1968年 / 12卷 / 06期

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D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：975 / &

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[1] GROWTH MECHANISM OF EPITAXIAL GERMANIUM FILMS IN IODIDE PROCESS
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FILATOVA, IV
SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1965, 9 (04): : 489 - &
[2] CHEMICAL CRYSTALLIZATION OF GERMANIUM IN OPEN IODIDE PROCESS
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SLEPTSOV, GV
SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1965, 9 (06): : 761 - &
[3] PRODUCING DEGENERATE EPITAXIAL FILMS OF GERMANIUM BY IODIDE METHOD
USPENSKAYA, GI
SHABANOV, VN
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SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1968, 12 (05): : 827 - +
[4] EPITAXIAL GROWTH OF GERMANIUM ON SILICON
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RIBEN, AR
FEUCHT, DL
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[5] THE EPITAXIAL GROWTH OF GERMANIUM ON ROCKSALT
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[6] GROWTH OF EPITAXIAL LAYERS OF SILICON BY THE OPEN TETRACHLORIDE PROCESS
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RAINOVA, YP
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JOURNAL OF APPLIED CHEMISTRY OF THE USSR, 1981, 54 (09): : 1869 - 1872
[7] EPITAXIAL-GROWTH OF GERMANIUM ON GERMANIUM IN AUTOEMISSION MICROSCOPE
IVANOV, VG
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[8] CONCERNING THE MECHANISM UNDERLYING THE GROWTH OF EPITAXIAL FILMS OF GERMANIUM BY MEANS OF THE IODINE PROCESS
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[9] EPITAXIAL GROWTH OF GOLD ON CADMIUM IODIDE
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[10] GROWTH AND DOPING OF EPITAXIAL SILICON FILMS IN AN OPEN TETRACHLORIDE PROCESS
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