OBSERVATIONS ON VARIOUS GENRES OF WHISKER DEFECT ON MOLECULAR-BEAM EPITAXIAL GROWN GAAS FILMS

[1] ORIGIN OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) : 117 - 122

[2] MORPHOLOGICAL DEFECTS ARISING DURING MBE GROWTH OF GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 756 - 764

[3] MICROTWINNING AND GROWTH DEFECTS IN GAAS MBE LAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (03) : 531 - 538

[4] CRYSTAL, IMPURITY-RELATED AND GROWTH DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS [J]. THIN SOLID FILMS, 1983, 101 (04) : 299 - 310

[5] APPLICATION OF MOLECULAR-BEAM EPITAXIAL LAYERS TO HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 467 - 470

[6] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 796 - 798

[7] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[8] GAAS MESFET PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) [J]. APPLIED PHYSICS LETTERS, 1976, 28 (01) : 30 - 31

[9] INITIAL RESULTS OF A HIGH THROUGHPUT MBE SYSTEM FOR DEVICE FABRICATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) : 493 - 496

[10] ITO T, 1984, JAPAN J APPL PHYS, V24, pL514

[1] ORIGIN OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) : 117 - 122

[2] MORPHOLOGICAL DEFECTS ARISING DURING MBE GROWTH OF GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 756 - 764

[3] MICROTWINNING AND GROWTH DEFECTS IN GAAS MBE LAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (03) : 531 - 538

[4] CRYSTAL, IMPURITY-RELATED AND GROWTH DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS [J]. THIN SOLID FILMS, 1983, 101 (04) : 299 - 310

[5] APPLICATION OF MOLECULAR-BEAM EPITAXIAL LAYERS TO HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 467 - 470

[6] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 796 - 798

[7] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[8] GAAS MESFET PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) [J]. APPLIED PHYSICS LETTERS, 1976, 28 (01) : 30 - 31

[9] INITIAL RESULTS OF A HIGH THROUGHPUT MBE SYSTEM FOR DEVICE FABRICATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) : 493 - 496

[10] ITO T, 1984, JAPAN J APPL PHYS, V24, pL514