EXPERIMENTS OF SCALING AND VARIABLE-RANGE-HOPPING IN THE INTEGRAL QUANTUM HALL-EFFECT

被引：6
|
作者：
YOO, KH
KWON, HC
PARK, JC
机构：
[1] Korea Research Institute of Standards and Science, Taejon, 305-606
来源：
SOLID STATE COMMUNICATIONS | 1994年 / 92卷 / 10期
关键词：
A HETEROJUNCTIONS; D QUANTUM HALL EFFECT; QUANTUM LOCALIZATION;
D O I：
10.1016/0038-1098(94)90320-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have studied the magnetoresistivity rho(xx) and Hall resistivity rho(xy) in GaAs/AlxGa1-xAs heterostructures at low temperatures. The half-width DELTAnu(T) of rho(xx) peaks exhibits the power-law dependence DELTAnu approximately T(k) with the exponent k = 0.50 +/- 0.03. This result has been explained by the model which accounts for the scaling behavior in terms of variable range hopping.
引用
收藏
页码：821 / 824
页数：4
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