OPTIMIZATION OF INTERFACES IN INGAAS/INP HETEROSTRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：11

作者：

MOZUME, T

KASHIMA, H

HOSOMI, K

OUCHI, K

SATO, H

MASUDA, H

TANOUE, T

OHBU, I

机构：

[1] Hitachi, Ltd, Tokyo

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 02期

关键词：

D O I：

10.1116/1.588364

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel source switching procedure in gas source molecular-beam epitaxy achieves abrupt interfaces in lattice-matched InGaAs/InP. In this procedure, the source supply is interrupted at each interface to reduce excess residual As or P atoms on the InGaAs or InP surfaces. The interruption time is optimized by characterizing the heterointerfaces by Auger electron microscopy and photoluminescence spectroscopy. High-resolution transmission electron microscopy reveals that each heterointerface of single quantum wells grown by this optimized switching procedure has no transition region. To our knowledge, this is the first successful growth of a perfectly abrupt InGaAs/InP heterointerface.

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收藏

页码：276 / 280

页数：5

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