FORMATION OF SINGLE-CRYSTAL AL INTERCONNECTION BY IN-SITU ANNEALING

被引：6
|
作者：
WADA, J
SUGURO, K
HAYASAKA, N
OKANO, H
机构：
[1] ULSI Research Laboratories, Research and Development Center, TOSHIBA Corporation, Saiwai-ku, Kawasaki, 210
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 6B期
关键词：
SINGLE-CRYSTAL AL; FILLED INTERCONNECTION; AGGLOMERATION; GROOVE; ELECTROMIGRATION;
D O I：
10.1143/JJAP.32.3094
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new process for forming Al interconnections on amorphous insulators such as SiO2 is proposed in this paper. Al thin films were found to agglomerate at temperatures below the melting point and to fill the grooves on a SiO2 layer by in situ annealing in which native oxide is only minimally formed on the Al surface. In sufficiently deep grooves, single-crystal Al interconnections were successfully formed without used of Al dry etching. It has been clearly confirmed by acceleration testing that single-crystal Al interconnections formed by means of the present process have excellent endurance against electromigration compared with conventional poly-crystal interconnections.
引用
收藏
页码：3094 / 3098
页数：5
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