COMPARISON OF DIFFERENT GAAS DETECTORS FOR X-RAY DIGITAL RADIOGRAPHY

被引：10
|
作者：
BENCIVELLI, W
BERTIN, R
BERTOLUCCI, E
BOTTIGLI, U
DAURIA, S
DELPAPA, C
FANTACCI, ME
RANDACCIO, P
ROSSO, V
STEFANINI, A
机构：
[1] UNIV PISA, IST PATOL, PISA, ITALY
[2] SEZ INFN, PISA, ITALY
[3] CERN, EUROPEAN LAB PARTICLE PHYS, CH-1211 GENEVA, SWITZERLAND
[4] UNIV PISA, DIPARTIMENTO FIS, PISA, ITALY
[5] UNIV BOLOGNA, DIPARTIMENTO FIS, BOLOGNA, ITALY
[6] SEZ INFN, BOLOGNA, ITALY
[7] UNIV CAGLIARI, IST FIS, CAGLIARI, ITALY
[8] SEZ INFN, CAGLIARI, ITALY
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1994年 / 338卷 / 2-3期
关键词：
D O I：
10.1016/0168-9002(94)91340-4
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Two different GaAs crystals, one LEC and one LPE, have been irradiated with photons of various energies, to compare their response in view of a possible application for digital radiography. Experimental results include I-V curves, charge collection efficiency, detection efficiency and energy resolution as a function of bias. A comparison is made with a simulation program that takes into account X-ray interactions, electric field and charge trapping inside the material.
引用
收藏
页码：549 / 555
页数：7
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