KINETICS OF THERMAL GROWTH OF ULTRA-THIN LAYERS OF SIO2 ON SILICON .2. THEORY

被引：71

作者：

GHEZ, R

VANDERME.YJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 08期

关键词：

D O I：

10.1149/1.2404406

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1100 / +

页数：1

共 23 条

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